c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wf wf wf wf f f f f 10n6 10n6 10n6 10n6 5 5 5 5 rev.a oct .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 10a,650v,r ds(on) (max 0.95 ? )@v gs =10v ? ultra-low gate charge(typical 43nc) ? fast switching capability ? 100%avalanche tested ? isolation voltage(v iso =4000v ac) ? improved dv/dt capability general description this power mosfet is produced using winsemi's advanced planar stripe, v dmos technology. this latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. this devices is specially well suited for ac-dc switching power supplies,dc-dc power converters,high voltage h-bridge motor drive pwm. absolute maximum ratings symbol parameter value units v dss drain source voltage 650 v i d continuous drain current(@tc=25 ) 10 * a continuous drain current(@tc=100 ) 6.0* a i dm drain current pulsed (note1) 40* a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 748 mj e ar repetitive avalanche energy (note1) 15.6 mj dv/dt peak diode recovery dv /dt (note3) 4.5 v/ ns p d total power dissipation(@tc=25 ) 50 w derating factor above 25 0.4 w/ t j ,t stg junction and storage temperature -55~150 t l channel temperature 300 * drain current limited by maximum junction temperature thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 2.5 /w r qja thermal resistance , junction-to -ambient - - 62 .5 /w
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 10n6 10n6 10n6 10n6 5 5 5 5 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 600 v,v gs =0v - - 10 a v ds =480v,tc=125 100 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 650 - - v gate threshold voltage v gs(th) v ds =10v,i d =250 a 3 - 4.5 v drain -source on resistance r ds(on) v gs =10v,i d = 4.75 a - 0.84 0.95 ? forward transconductance gfs v ds =50v,i d =4.75a - 6.4 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 1430 - pf reverse transfer capacitance c rss - 2.5 - output capacitance c oss - 117 - switching time rise time tr v dd = 300 v, i d = 10 a r g = 25 ? (note4,5) - 46 - ns turn-on time ton - 74 - fall time tf - 340 - turn-off time toff - 66 - total gate charge(gate-source plus gate-drain) qg v dd = 480 v , v gs =10v, i d = 10 a (note 4 ,5) - 43 - nc gate-source charge qgs - 9 - gate-drain("miller") charge qgd - 15 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 10 a pulse drain reverse current i drp - - - 40 a forward voltage(diode) v dsf i dr = 10 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 10 a,v gs =0v , di dr / dt =100 a / s - 450 - ns reverse recovery charge qrr - 2.4 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 14.5m h i as = 9.7 a,v dd = 90 v, r g =25 ? ,starting t j =25 3.i sd 10 a,di/dt 200 a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 10n6 10n6 10n6 10n6 5 5 5 5 3 / 7 fig.1 on-state cha ra cteristics fig.2 transfer current c haracteristics fig.3 on-resistance variation vs drain current fig.4 body diode forward voltage variation with source current and temperature fig.5 maximum drain current vs case temperature fig.6 gate charge characteristics
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 10n6 10n6 10n6 10n6 5 5 5 5 4 / 7 fig.7 maximum safe operation area fig.8 on-resistance variation vs junction temperature fig.9 transient thermal response curve
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 10n6 10n6 10n6 10n6 5 5 5 5 5 / 7 fig.10 gate test circuit & waveform fig.11 r esistive switching test circuit & waveform fig.12 uncamped inductive switching test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 10n6 10n6 10n6 10n6 5 5 5 5 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wf wf wf wf f f f f 10n6 10n6 10n6 10n6 5 5 5 5 7 / 7 to-220 to-220 to-220 to-220 package package package package dimension dimension dimension dimension unit:mm
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